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| - 1 - k4h560438n rev. 1.01, may. 2010 samsung electronics reserves the right to change products, information and specifications without notice. products and specifications discussed herein are for reference pur poses only. all info rmation discussed herein is provided on an "as is" bas is, without warranties of any kind. this document and all information discussed herein re main the sole and exclusive property of samsung electronics. no license of any patent, copyright, mask work, tradem ark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or other- wise. samsung products are not intended for use in life sup port, critical care, medical, safety equipment, or similar applications where pr oduct failure could result in loss of li fe or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. for updates or additional information about samsung products, contact your nearest samsung office. all brand names, trademarks and registered tradem arks belong to their respective owners. ? 2010 samsung electronics co., ltd. all rights reserved. K4H560838N k4h561638n 256mb n-die ddr sdram 66tsop- (ii) with lead-free & halogen-free (rohs compliant) datasheet
- 2 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n revision history revision no. history draft date remark editor 1.0 - first release apr. 2010 - s.h.kim 1.01 - corrected typo. may. 2010 - s.h.kim - 3 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n table of contents 256mb n-die ddr sdram 1. key features................................................................................................................ ................................................. 4 2. ordering information ........................................................................................................ ............................................. 4 3. operating frequencies ............. .............. .............. .............. .............. .............. ........... ......... .......................................... 4 4. pin / ball description ...................................................................................................... ............................................... 5 5. package physical dimension......... .............. .............. .............. .............. ............ ........... .......... ...................................... 6 6. block diagram (16mb x4 / 8mbx8 / 4mx16 i/o x4 ban ks) ........................................................................ .................... 7 7. input/output function description ..................... ...................................................................... ..................................... 8 8. command truth table ..... .............. .............. .............. .............. ............ ........... ........... .......... ......................................... 9 9. general description ......................................................................................................... ............................................. 10 10. absolute maximum rating ......... ........................................................................................... ...................................... 10 11. dc operating conditions .................................................................................................... ........................................ 10 12. ddr sdram spec items & test cond itions ........... .............. .............. .............. ............ ........... ......... ......................... 11 13. input/output capacitance ................................................................................................... ........................................ 11 14. detailed test condition for ddr sdram idd1 & idd7a . ............ .............. .............. ........... ........... .......... ................... 12 15. ddr sdram idd spec table ........ .............. .............. .............. .............. .............. ........... .......... ................................. 13 16. ac operating conditions .................................................................................................... ........................................ 14 17. ac overshoot/undershoot specification for address and control pins ........ .............. .............. ........... .......... ............. 14 18. overshoot/undershoot specif ication for data, strobe and mask pins .... .............. .............. .............. ............ .............. 15 19. ac timing parameters & specif ications ...................................................................................... ............................... 16 20. system characteristics for ddr sdram ....................................................................................... ............................ 17 21. component notes ....... ............... .............. .............. .............. ........... ........... ........... ........... ........................................... 18 22. system notes............................................................................................................... ............................................... 20 23. ibis : i/v characteristics for input and output bu ffers.................................................................... ............................ 21 - 4 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 1. key features ? v dd : 2.5v 0.2v, v ddq : 2.5v 0.2v ? double-data-rate architecture; two data transfers per clock cycle ? bidirectional data strobe [dqs] (x4,x8) & [l(u)dqs] (x16) ? four banks operation ? differential clock inputs(ck and ck ) ? dll aligns dq and dqs tran sition with ck transition ? mrs cycle with address key programs -. read latency : ddr266(2, 2.5 clock), ddr333(2.5 clock), ddr400(3 clock) -. burst length (2, 4, 8) -. burst type (sequential & interleave) ? all inputs except data & dm are sampled at the positive going edge of the system clock(ck) ? data i/o transactions on both edges of data strobe ? edge aligned data output, center aligned data input ? ldm,udm for write masking only (x16) ? dm for write masking only (x4, x8) ? auto & self refresh ? 7.8us refresh interval(8k/64ms refresh) ? maximum burst refresh cycle : 8 ? 66pin tsop ii lead-free & halogen-free package ? rohs compliant 2. ordering information note : 1. "-b3"(ddr333, cl=2.5) can support "-b0"(ddr266, cl=2.5)/ "-a2"(ddr266, cl=2). 2. "l" of part number(12th digit) stands for rohs compliant and halogen-free product. 3. operating frequencies part no. org. max freq. interface package note k4h560438n-lc/lb3 64m x 4 b3(ddr333@cl=2.5) sstl2 66pin tsop ii lead-free & halogen-free 1, 2 k4h560438n-lc/lb0 b0(ddr266@cl=2.5) 2 K4H560838N-lc/lcc 32m x 8 cc(ddr400@cl=3) sstl2 66pin tsop ii lead-free & halogen-free 2 K4H560838N-lc/lb3 b3(ddr333@cl=2.5) 1, 2 k4h561638n-lc/lcc 16m x 16 cc(ddr400@cl=3) sstl2 66pin tsop ii lead-free & halogen-free 2 k4h561638n-lc/lb3 b3(ddr333@cl=2.5) 1, 2 cc(ddr400@cl=3) b3(ddr333@cl=2.5) a2(ddr266@cl=2.0) b0(ddr266@cl=2.5) speed @cl2 - 133mhz 133mhz 100mhz speed @cl2.5 166mhz 166mhz 133mhz 133mhz speed @cl3 200mhz - - - cl-trcd-trp 3-3-3 2.5-3-3 2-3-3 2.5-3-3 figure 1. row & column address configuration - 5 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 4. pin / ball description dm is internally loaded to match dq and dqs identically. organization row address column address 64mx4 a0~a12 a0-a9, a11 32mx8 a0~a12 a0-a9 16mx16 a0~a12 a0-a8 256mb tsop-ii package pinout v dd 1 66pin tsop ii (400mil x 875mil) dq 0 2 v ddq 3 nc 4 dq 1 5 v ssq 6 nc 7 dq 2 8 v ddq 9 nc 10 dq 3 11 v ssq 12 ba 0 20 cs 19 ras 18 cas 17 we 16 nc 15 v ddq 14 nc 13 v dd 27 a 3 26 a 2 25 a 1 24 a 0 23 ap/a 10 22 ba 1 21 v ss 54 dq 7 53 v ssq 52 nc 51 dq 6 50 v ddq 49 nc 48 dq 5 47 v ssq 46 nc 45 dq 4 44 v ddq 43 a 11 35 36 cke 37 ck 38 dm 39 v ref 40 v ssq 41 nc 42 v ss 55 a 4 56 a 5 57 a 6 58 a 7 59 a 8 60 a 9 34 (0.65mm pin pitch) 33 32 31 30 29 28 61 62 63 64 65 66 nc nc nc nc nc v dd nc dqs nc v ss ck nc a 12 v ss nc v ssq nc dq 3 v ddq nc nc v ssq nc dq 2 v ddq a 11 cke ck dm v ref v ssq nc v ss a 4 a 5 a 6 a 7 a 8 a 9 nc dqs nc v ss ck nc a 12 v dd nc v ddq nc dq 0 v ssq nc nc v ddq nc dq 1 v ssq ba 0 cs ras cas we nc v ddq nc v dd a 3 a 2 a 1 a 0 ap/a 10 ba 1 nc nc nc nc nc v dd bank address ba0~ba1 auto precharge a10 64mb x 4 32mb x 8 v dd dq 0 v ddq dq 1 dq 2 v ssq dq 3 dq 4 v ddq dq 5 dq 6 v ssq ba 0 cs ras cas we ldm v ddq dq 7 v dd a 3 a 2 a 1 a 0 ap/a 10 ba 1 nc ldqs nc nc nc v dd v ss dq 15 v ssq dq 14 dq 13 v ddq dq 12 dq 11 v ssq dq 10 dq 9 v ddq a 11 cke ck udm v ref v ssq dq 8 v ss a 4 a 5 a 6 a 7 a 8 a 9 nc udqs nc v ss ck nc a 12 16mb x 16 figure 2. 66pin tsop(ii) package dimension - 6 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 5. package physical dimension #1 (1.50) (1.50) #66 #34 #33 10.16 0.10 ( r 0 . 1 5 ) 22.22 0.10 0.210 0.05 0.665 0.05 ( r 0 . 1 5 ) (0.71) [0.65 0.08] 0.65typ 0.30 (10 ? ? ? ? 0.20 (0.80) (0.80) (0.50) (0.50) (4 ? ? ? 0.08 1.00 0.10 0.05 min 1.20 max 0.10 max 0.075 max [ [ note 1. ( ) is reference 2. [ ] is ass???y out quality detail a detail b detail b detail a 0.25 0.08 unit : mm - 7 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 6. block diagram (16mb x4 / 8mbx8 / 4mx16 i/o x4 banks) bank select timing register address register refresh counter row buffer row decoder col. buffer data input register serial to parallel 8mx8 / 4mx16 / 2mx32 8mx8 / 4mx16 / 2mx32 8mx8 / 4mx16 / 2mx32 8mx8 / 4mx16 / 2mx32 sense amp 2-bit prefetch output buffer i/o control column decoder latency & burst length programming register dll strobe gen. ck, ck add lcke ck, ck cke cs ras cas we ck, ck lcas lras lcbr lwe lwcbr lras lcbr ck, ck x8/16/32 x8/16/32 x4/8/16 x4/8/16 lwe ldm (x4x8) x4/8/16 dqi data strobe ludm (x16) ldm (x4x8) ludm (x16) dm input register ldm (x4x8) ludm (x16) - 8 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 7. input/output function description symbol type description ck, ck input clock : ck and ck are differential clock inputs. all address and control input signals are sampled on the positive edge of ck and negative edge of ck . output (read) data is referenced to both edges of ck. inter- nal clock signals are derived from ck/ck . cke input clock enable : cke high activates, and cke low deacti vates internal clock signals, and device input buf- fers and output drivers. taking cke low prov ides precharge power-down and self refresh operation (all banks idle), or active power-down (r ow active in any bank). cke is synchronous for power-down entry and exit, and for self refresh entry. cke is asynchronous for self refresh exit, and for output disable. cke must be maintained high throughput read and write accesses. input buffers, excluding ck, ck and cke are disabled during power-do wn. input buffers, excluding cke are disabled during self refresh. cke is an sstl_2 input, but will detect an lvcmos low level after v dd is applied upon 1st power up, after v ref has become stable during the power on and initialization sequence, it must be maintained for proper operation of the cke receiver. for proper self-refresh entry and exit, v ref must be maintained to this input. cs input chip select : cs enables(registered low) and disables(regi stered high) the command decoder. all com- mands are masked when cs is registered high. cs provides for external bank selection on systems with multiple banks. cs is considered part of the command code. ras , cas , we input command inputs : ras , cas and we (along with cs ) define the command being entered. ldm,(udm) input input data mask : dm is an input mask signal for write data. input data is masked when dm is sampled high along with that input data during a write access. dm is sampled on both edges of dqs. although dm pins are input only, the dm loading matches th e dq and dqs loading. for the x16, ldm corresponds to the data on dq0~d7 ; udm corresponds to the data on dq8~dq15. dm may be driven high, low, or floating during reads. ba0, ba1 input bank addres inputs : ba0 and ba1 define to which bank an active, read, write or precharge command is being applied. a [0 : 12] input address inputs : provide the row address for ac tive commands, and the column address and auto precharge bit for read/write commands, to select one location out of the memory array in the respective bank. a10 is sampled during a precha rge command to determine whether the precharge applies to one bank (a10 low) or all banks (a10 high ). if only one bank is to be precharged, the bank is selected by ba0, ba1. the address inputs also prov ide the op-code during a mode register set com- mand. ba0 and ba1 define which mode register is loaded during the mode register set command (mrs or emrs). dq i/o data input/output : data bus ldqs,(u)dqs i/o data strobe : output with read data, input with write data. edge-aligned with read data, centered in write data. used to capture write data. for the x16, ldqs corresponds to the data on dq0~d7 ; udqs corresponds to the data on dq8~dq15. ldqs is nc on x4 and x8. nc - no connect : no internal el ectrical connection is present. v ddq supply dq power supply : +2.5v 0.2v. v ssq supply dq ground. v dd supply power supply : +2.5v 0.2v. v ss supply ground. v ref input sstl_2 reference voltage. - 9 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 8. command truth table (v=valid, x=don?t care, h=logic high, l=logic low) note : 1. op code : operand code. a0 ~ a12& ba0 ~ ba1 : program keys. (@emrs/mrs) 2. emrs/mrs can be issued only at all banks precharge state. a new command can be issued 2 clock cycles after emrs or mrs. 3. auto refresh functions are same as the cbr refresh of dram. the automatical precharge without row precharge command is meant by "auto". auto/self refresh can be issued only at all banks precharge state. 4. ba0 ~ ba1 : bank select addresses. if both ba0 and ba1 are "low" at read, write, row active and precharge, bank a is selected. if ba0 is "high" and ba1 is "low" at read, write, row active and precharge, bank b is selected. if ba0 is "low" and ba1 is "high" at read, write, row active and precharge, bank c is selected. if both ba0 and ba1 are "high" at read, write, row active and precharge, bank d is selected. 5. if a10/ap is "high" at row precharge, ba0 and ba1 are ignored and all banks are selected. 6. during burst write with auto precharge, new read/write command can not be issued. another bank read/write command can be issued after the end of burst. new row active of the associated bank can be issued at trp after the end of burst. 7. burst stop command is valid at every burst length. 8. dm(x4/8) sampled at the rising and falling edges of the dqs and data-in are masked at the both edges (write dm latency is 0) . udm/ldm(x16 only) sampled at the rising and falling edges of the udqs/ldqs and data-in are masked at the both edges (write udm/ldm latency is 0). 9. this combination is not defin ed for any function, which means "no operation(nop)" in ddr sdram. command cken-1 cken cs ras cas we ba0,1 a10/ap a0 ~ a9, a11 ~ a12 note register extended mrs h x l l l l op code 1, 2 register mode register set h x l l l l op code 1, 2 refresh auto refresh h h ll l h x 3 self refresh entry l 3 exit l h lh h h x 3 hx x x 3 bank active & row addr. h x l l h h v row address read & column address auto precharge disable hxlhlhv l column address 4 auto precharge enable h4 write & column address auto precharge disable hxlhllv l column address 4 auto precharge enable h4, 6 burst stop h x l h h l x 7 precharge bank selection hxllhl vl x all banks xh 5 active power down entry h l hx x x x lv v v exit l h x x x x precharge power down mode entry h l hx x x x lh h h exit l h hx x x lv v v dm(udm/ldm for x16 only) h x x 8 no operation (nop) : not defined h x hx x x x 9 lh h h 9 - 10 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 16m x 4bit x 4 banks / 8m x 8bit x 4 banks / 4m x 16bit x 4 banks double data rate sdram 9. general description the k4h560438n / K4H560838N / k4h561638n is 268,435,456 bits of do uble data rate synchronous dram organized as 4x 16,777,216 / 4x 8,388,608 / 4x 4,194,304 words by 4/8/16bits, fabricated with samsung c s high performance cmos technology. synchro nous features with data strobe allow extremely high performance up to 400mb/s per pin. i/o transactions are possible on both edges of dqs. range of operating freque ncies, programmable burst length and programmable latencies allow the device to be us eful for a variety of high performance memory system applicati ons. 10. absolute maximum rating note : permanent device damage may occur if absolute maximum ratings are exceeded. functional operation should be restricted to recommend operation condition. exposure to higher than recommended voltage for extend ed periods of time could affect device reliability. 11. dc operating conditions recommended operating conditions(voltage referenced to v ss =0v, ta=0 to 70 q c) note : 1. v ref is expected to be equal to 0.5*v ddq of the transmitting device, and to track variations in the dc level of same. peak-to peak noise on v ref may not exceed +/-2% of the dc value. 2. v tt is not applied directly to the device. v tt is a system supply for signal termination resistors, is expected to be set equal to v ref, and must track variations in the dc level of v ref, 3. v id is the magnitude of the difference between the input level on ck and the input level on ck . 4. the ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25v to 1.0v. for a given output, it re presents the maximum difference between pull-up and pull-down driv ers due to process variation. the full varia- tion in the ratio of the maximum to minimum pull-up and pull-down current will not exceed 1.7 for device drain to source voltag es from 0.1 to 1.0. parameter symbol value unit voltage on any pin relative to v ss v in , v out -0.5 ~ 3.6 v voltage on v dd & v ddq supply relative to v ss v dd , v ddq 1.0 ~ 3.6 v storage temperature t stg -55 ~ +150 q c power dissipation p d 1w short circuit current i os 50 ma parameter symbol min max unit note supply voltage v dd 2.3 2.7 v i/o supply voltage v ddq 2.3 2.7 v i/o reference voltage v ref 0.49*v ddq 0.51*v ddq v1 i/o termination voltage(system) v tt v ref -0.04 v ref +0.04 v2 input logic high voltage v ih (dc) v ref +0.15 v ddq +0.3 v input logic low voltage v il (dc) -0.3 v ref -0.15 v input voltage level, ck and ck inputs v in (dc) -0.3 v ddq +0.3 v input differential voltage, ck and ck inputs v id (dc) 0.36 v ddq +0.6 v 3 v-i matching: pullup to pulldown current ratio v i (ratio) 0.71 1.4 - 4 input leakage current i i -2 2 ua output leakage current i oz -5 5ua output high current(normal strengh driver) ;v out = v tt + 0.84v i oh -16.8 ma output high current(normal strengh driver) ;v out = v tt - 0.84v i ol 16.8 ma output high current(half strengh driver) ;v out = v tt + 0.45v i oh -9 ma output high current(half strengh driver) ;v out = v tt - 0.45v i ol 9ma - 11 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 12. ddr sdram spec items & test conditions 13. input/output capacitance ( t a = 25 q c, f=100mhz) note : 1.these values are guaranteed by design and are tested on a sample basis only. 2. although dm is an input -only pin, the input capacitance of th is pin must model the input capacitance of the dq and dqs pin s. this is required to match signal propagation times of dq, dqs, and dm in the system. 3. unused pins are tied to ground. 4. this parameteer is sampled. v ddq = +2.5v +0.2v, v dd = +2.5v+0.2v. for all devices, f=100mhz, ta=25 q c, v out (dc) = v ddq /2, v out (peak to peak) = 0.2v. dm inputs are grouped with i/o pins - re flecting the fact that they are matched in loading (to facilita te trace matching at the board level). conditions symbol operating current - one bank active-precharge; trc=trcmin; tck=10ns for ddr200, tck=7.5ns for ddr266, 6ns for ddr333, 5ns for ddr400; dq,dm and dqs inputs changing once per clock cycle; address and control inputs changi ng once every two clock cycles. idd0 operating current - one bank operation ; one bank open, bl=4, reads - refer to the following page for detailed test condition idd1 precharge power-down standby current; all banks idle; power - down mode; cke = - 12 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 14. detailed test condition for ddr sdram idd1 & idd7a idd1 : operating current: one bank operation 1. typical case: vdd = 2.5v, t=25 q c worst case : vdd = 2.7v, t=10 q c 2. only one bank is accessed with trc(min), burst mode, address and control inputs on nop edge are changing once per clock cycle. lout = 0ma 3. timing patterns - b0(133mhz, cl=2.5) : tck = 7.5ns, cl=2.5, bl=4, trcd = 3*tck, trc = 9*tck, tras = 6*tck read : a0 n n r0 n n p0 n n a0 n - repeat the same timing with random address changing *50% of data changing at every burst - a2 (133mhz, cl=2) : tck = 7.5ns, cl=2, bl=4, trcd = 3*tck, trc = 9*tck, tras = 6*tck read : a0 n n r0 n n p0 n n a0 n - repeat the same timing with random address changing *50% of data changing at every burst - b3(166mhz, cl=2.5) : tck=6ns, cl=2.5, bl=4, trcd=3*tck, trc = 10*tck, tras=7*tck read : a0 n n r0 n n p0 n n a0 n - repeat the same timing with random address changing *50% of data changing at every burst - cc(200mhz,cl = 3) : tck = 5ns, cl = 3, bl = 4, trcd = 3*tck , trc = 11*tck, tras = 8*tck read : a0 n n r0 n n n n p0 n n - repeat the same timing with random address changing *50% of data changing at every transfer legend : a=activate, r=read, w=write, p=precharge, n=deselect idd7a : operating current: four bank operation 1. typical case: v dd = 2.5v, t=25 q c worst case : v dd = 2.7v, t= 10 q c 2. four banks are being interleaved with trc(min), bu rst mode, address and control inputs on nop edge are not changing. lout = 0ma 4. timing patterns - b0(133mhz, cl=2.5) : tck = 7.5ns, cl=2.5, bl=4, trrd = 2*tck, trcd = 3*tck, read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 n a0 n a1 r0 - repeat the same timing with random address changing *50% of data changing at every burst - a2(133mhz, cl=2) : tck = 7.5ns, cl2=2, bl=4, trrd = 2*tck, trcd = 3*tck, read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 n a0 n a1 r0 - repeat the same timing with random address changing *50% of data changing at every burst - b3(166mhz,cl=2.5) : tck=6ns, cl=2.5, bl=4, trrd=2*tck, trcd=3*tck, read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 n a0 n a1 r0 - repeat the same timing with random address changing *50% of data changing at every burst - cc(200mhz,cl = 3) : tck = 5ns, cl = 3, bl = 4, trrd=2*tck, trcd=3*tck, read with autoprecharge read : a0 n a1 r0 a2 r1 a3 r2 n r3 n a0 n a1 r0 - repeat the same timing with random address changing *50% of data changing at every transfer legend : a=activate, r=read, w=write, p=precharge, n=deselect - 13 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 15. ddr sdram idd spec table symbol 64mx4 (k4h560438n) unit note b3(ddr333@cl=2.5) b0(ddr266@cl=2.5) idd0 45 40 ma idd1 50 45 ma idd2p 3 3 ma idd2f 20 20 ma idd2q 17 17 ma idd3p 10 10 ma idd3n 25 20 ma idd4r 65 60 ma idd4w 60 55 ma idd5 75 70 ma idd6 normal 3 3 ma low power 1.5 1.5 ma idd7a 105 85 ma symbol 32mx8 (K4H560838N) unit note cc(ddr400@cl=3) b3(ddr333@cl=2.5) idd0 45 45 ma idd1 55 50 ma idd2p 3 3 ma idd2f 20 20 ma idd2q 17 17 ma idd3p 10 10 ma idd3n 25 25 ma idd4r 80 75 ma idd4w 70 65 ma idd5 80 75 ma idd6 normal 3 3 ma low power 1.5 1.5 ma idd7a 125 110 ma symbol 16mx16 (k4h561638n) unit note cc(ddr400@cl=3) b3(ddr333@cl=2.5) idd0 50 45 ma idd1 60 55 ma idd2p 3 3 ma idd2f 20 20 ma idd2q 17 17 ma idd3p 15 10 ma idd3n 30 25 ma idd4r 100 90 ma idd4w 75 65 ma idd5 80 80 ma idd6 normal 3 3 ma low power 1.5 1.5 ma idd7a 140 120 ma - 14 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 16. ac operating conditions figure 3. ac overshoot/undershoot definition note : 1. v id is the magnitude of the difference between the input level on ck and the input level on ck . 2. the value of v ix is expected to equal 0.5*v ddq of the transmitting device and must track variations in the dc level of the same. 17. ac overshoot/undershoot specification for address and control pins parameter/condition symbol min max unit note input high (logic 1) voltage, dq, dqs and dm signals v ih (ac) v ref + 0.31 v input low (logic 0) voltage, dq, dqs and dm signals. v il (ac) v ref - 0.31 v input differential voltage, ck and ck inputs v id (ac) 0.7 v ddq +0.6 v1 input crossing point voltage, ck and ck inputs v ix (ac) 0.5*v ddq -0.2 0.5*v ddq +0.2 v2 parameter specification ddr400 ddr333 ddr200/266 maximum peak amplitude allowed for overshoot 1.5 v 1.5 v 1.5 v maximum peak amplitude allowed for undershoot 1.5 v 1.5 v 1.5 v the area between the overshoot signal and v dd must be less than or equal to 4.5 v-ns 4.5 v-ns 4.5 v-ns the area between the undershoot signal and gnd must be less than or equal to 4.5 v-ns 4.5 v-ns 4.5 v-ns 5 4 3 2 1 0 -1 -2 -3 -4 -5 0 0.5 0.6875 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.3125 6.5 7.0 v dd overshoot maximum amplitude = 1.5v area maximum amplitude = 1.5v undershoot gnd volts (v) tims(ns) figure 4. dq/dm/dqs ac overshoot/undershoot definition - 15 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 18. overshoot/undershoot specification for data, strobe and mask pins parameter specification ddr400 ddr333 ddr200/266 maximum peak amplitude allowed for overshoot 1.2 v 1.2 v 1.2 v maximum peak amplitude allowed for undershoot 1.2 v 1.2 v 1.2 v the area between the overshoot signal and v dd must be less than or equal to 2.4 v-ns 2.4 v-ns 2.4 v-ns the area between the undershoot signal and gnd must be less than or equal to 2.4 v-ns 2.4 v-ns 2.4 v-ns 5 4 3 2 1 0 -1 -2 -3 -4 -5 0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0 v ddq overshoot maximum amplitude = 1.2v area maximum amplitude = 1.2v undershoot gnd volts (v) tims(ns) - 16 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 19. ac timing parameters & specifications parameter symbol cc (ddr400@cl=3.0) b3 (ddr333@cl=2.5) a2 (ddr266@cl=2.0) b0 (ddr266@cl=2.5) unit note min max min max min max min max row cycle time trc 55 60 65 65 ns refresh row cycle time trfc 70 72 75 75 ns row active time tras 40 70k 42 70k 45 120k 45 120k ns ras to cas delay trcd 15 18 20 20 ns row precharge time trp 15 18 20 20 ns row active to row active delay trrd 10 12 15 15 ns write recovery time twr 15 15 15 15 ns last data in to read command twtr 2 1 1 1 tck clock cycle time cl=2.0 tck - - 7.5 12 7.5 12 10 12 ns cl=2.5 6126127.5127.512ns cl=3.0 510------ clock high level width tch 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tck clock low level width tcl 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tck dqs-out access time from ck/ck tdqsck -0.55 +0.55 -0.6 +0.6 -0.75 +0.75 -0.75 +0.75 ns output data access time from ck/ck tac -0.65 +0.65 -0.7 +0.7 -0.75 +0.75 -0.75 +0.75 ns data strobe edge to ouput data edge tdqsq - 0.4 - 0.45 - 0.5 - 0.5 ns 22 read preamble trpre 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tck read postamble trpst 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tck ck to valid dqs-in tdqss 0.72 1.28 0.75 1.25 0.75 1.25 0.75 1.25 tck dqs-in setup time twpres 0 0 0 0 ns 13 dqs-in hold time twpre 0.25 0.25 0.25 0.25 tck dqs falling edge to ck rising-setup time tdss 0.2 0.2 0.2 0.2 tck dqs falling edge from ck rising-hold time tdsh 0.2 0.2 0.2 0.2 tck dqs-in high level width tdqsh 0.35 0.35 0.35 0.35 tck dqs-in low level width tdqsl 0.35 0.35 0.35 0.35 tck address and control input setup time(fast) tis 0.6 0.75 0.9 0.9 ns 15, 17~19 address and control input hold time(fast) tih 0.6 0.75 0.9 0.9 ns 15, 17~19 address and control input setup time(slow) tis 0.7 0.8 1.0 1.0 ns 16~19 address and control input hold time(slow) tih 0.7 0.8 1.0 1.0 ns 16~19 data-out high impedence time from ck/ck thz -0.65 +0.65 -0.7 +0.7 -0.75 +0.75 -0.75 +0.75 ns 11 data-out low impedence time from ck/ck tlz -0.65 +0.65 -0.7 +0.7 -0.75 +0.75 -0.75 +0.75 ns 11 mode register set cycle time tmrd 10 12 15 15 ns dq & dm setup time to dqs tds 0.4 0.45 0.5 0.5 ns j, k dq & dm hold time to dqs tdh 0.4 0.45 0.5 0.5 ns j, k control & address input pulse width tipw 2.2 2.2 2.2 2.2 ns 18 dq & dm input pulse width tdipw 1.75 1.75 1.75 1.75 ns 18 exit self refresh to non-read command txsnr 75 75 75 75 ns exit self refresh to read command txsrd 200 200 200 200 tck refresh interval time trefi 7.8 7.8 7.8 7.8 us 14 output dqs valid window tqh thp -tqhs - thp -tqhs - thp -tqhs - thp -tqhs -ns21 clock half period thp tclmin or tchmin - tclmin or tchmin - tclmin or tchmin - tclmin or tchmin - ns 20, 21 data hold skew factor tqhs 0.5 0.55 0.75 0.75 ns 21 dqs write postamble time twpst 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tck 12 active to read with auto precharge command trap 15 18 20 20 autoprecharge write recovery + precharge time tdal (twr/tck) + (trp/tck) (twr/tck) + (trp/tck) (twr/tck) + (trp/tck) (twr/tck) + (trp/tck) tck 23 power down exit time tpdex 1111 tck - 17 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 20. system characteristics for ddr sdram the following specification parameters are required in system s using ddr400 and ddr333 devices to ensure proper system perform ance. these char- acteristics are for system simulati on purposes and are guaranteed by design. [ table 1 ] input slew rate for dq, dqs, and dm [ table 2 ] input setup & hold time derating for slew rate [ table 3 ] input/output setup & hold time derating for slew rate [ table 4 ] input/output setup & hold derating for rise/fall delta slew rate [ table 5 ] output slew rate characteristice (x4, x8 devices only) [ table 6 ] output slew rate characteristice (x16 devices only) [ table 7 ] output slew rate matching ratio characteristics ac characteristics symbol ddr400 ddr333 ddr266 units note parameter min max min max min max dq/dm/dqs input slew rate measured between v ih (dc), v il (dc) and v il (dc), v ih (dc) dcslew 0.5 4.0 0.5 4.0 0.5 4.0 v/ns a, l input slew rate ' tis ' tih units note 0.5 v/ns 0 0 ps i 0.4 v/ns +50 0 ps i 0.3 v/ns +100 0 ps i input slew rate ' tds ' tdh units note 0.5 v/ns 0 0 ps k 0.4 v/ns +75 +75 ps k 0.3 v/ns +150 +150 ps k delta slew rate ' tds ' tdh units note +/- 0.0 v/ns 0 0 ps j +/- 0.25 v/ns +50 +50 ps j +/- 0.5 v/ns +100 +100 ps j slew rate characteristic typical range (v/ns) minimum (v/ns) maximum (v/ns) note pull-up slew rate 1.2 ~ 2.5 1.0 4.5 a,c,d,f,g,h pull-down slew 1.2 ~ 2.5 1.0 4.5 b,c,d,f,g,h slew rate characteristic typical range (v/ns) minimum (v/ns) maximum (v/ns) note pull-up slew rate 1.2 ~ 2.5 0.7 5.0 a,c,d,f,g,h pull-down slew 1.2 ~ 2.5 0.7 5.0 b,c,d,f,g,h ac characteristics ddr400 ddr333 ddr266 note parameter min max min max min max output slew rate matching ratio (pullup to pulldown) 0.67 1.5 0.67 1.5 0.67 1.5 e, l figure 5. timing reference load - 18 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 21. component notes 1. all voltages referenced to v ss . 2. tests for ac timing, idd, and electric al, ac and dc characte ristics, may be conducted at nominal reference/supply voltage l evels, but the related speci- fications and device operation are guarant eed for the full voltage range specified. 3. figure 5 represents the timing reference load used in defining the relevant timing parameters of the part. it is not int ended to be either a precise rep- resentation of the typical system environment nor a depiction of the actual load presented by a production tester. system desi gners will use ibis or other simulation tools to correlate the timing reference load to a system environment. manufacturers will correlate to their p roduction test conditions (generally a coaxial transmi ssion line terminated at the tester electronics). 4. ac timing and idd tests may use a v il to v ih swing of up to 1.5 v in the test environment, but input timing is still referenced to v ref (or to the crossing point for ck/ck ), and parameter specifications are guaranteed for the specified ac input levels under normal us e conditions. the minimum slew rate for the input signals is 1 v/ns in the range between v il (ac) and v ih (ac). 5. the ac and dc input level specificat ions are as defined in the sstl_2 standard (i .e., the receiver will effectively switch as a result of the signal crossing the ac input level and will remain in that state as long as t he signal does not ring back above (below) the dc input low (high) level. 6. inputs are not recognized as valid until v ref stabilizes. exception: during the period before v ref stabilizes, cke ? ? ? < ? - 19 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 20. min (tcl, tch) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tcl and tch).....for example, tcl and tch are = 50% of the period, less the half per iod jitter (tjit(hp)) of the clock source, and less the half period jitter due to crosstalk (tjit(crosstalk)) into the clock traces. 21. tqh = thp - tqhs, where: thp = minimum half clock period for any given cycle and is defi ned by clock high or clock low (tch, tcl). tqhs accounts for 1) the pulse duration dis- tortion of on-chip clock circuits; and 2) the worst case push-ou t of dqs on one tansition followed by the worst case pull-in of dq on the next transi- tion, both of which are, separately, due to data pin skew and ou tput pattern effects, and p-channel to n-channel variation of the output drivers. 22. tdqsq consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle. 23. tdal = (twr/tck) + (trp/tck) for each of the terms above, if not already an integer , round to the next highest integer. example: for ddr400 at cl=3 an d tck=5ns tdal = (15 ns / 5 ns) + (15 ns/ 5ns) = (3) + (3) tdal = 6 clocks figure 7. pull-down slew rate test load figure 6. pull-up slew rate test load - 20 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 22. system notes a. pull-up slew rate is char acteristized under the test c onditions as shown in figure 6. b. pull-down slew rate is measured under the test conditions shown in figure 7. c. pull-up slew rate is measured between (v ddq /2 - 320 mv +/- 250 mv) pull-down slew rate is measured between (v ddq /2 + 320 mv +/- 250 mv) pull-up and pull-down slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output switching. example : for typical slew rate, dq0 is switching for minmum slew rate, all dq bits are switching from either high to low, or low to high. the remaini ng dq bits remain the same as for previous state. d. evaluation conditions typical : 25 figure 8. i/v characteristics for input/output buffers : pull-down(above) and pull-up(below) - 21 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n 23. ibis : i/v characteristics for input and output buffers ddr sdram output driver v-i characteristics ddr sdram output driver characteristics are defined for fu ll and half strength operation as selected by the emrs bit a1. figures 4, 5 and 6 show the driver characte ristics graphically, and tables 8, 9 and 10 s how the same data in tabular format sui table for input into simulation tools. the driver characteristcs evaluat ion conditions are: output driver characteristic curves notes: 1. the full variation in driver current from minimum to maxi mum process, temperature and voltage will lie within the outer bou nding lines the of the v-i curve of figures 4, 5 and 6. 2. it is recommended that the "typical" ibis v-i curve lie within the inner bounding lines of the v-i curves of figures 4, 5 an d 6. 3. the full variation in the ratio of the "typical" ibis pull -up to "typical" ibis pull-down current should be unity +/- 10%, f or device drain to source voltages from 0.1 to 1.0. this specification is a design objective only. it is not guaranteed. typical 25xc v dd /v ddq = 2.5v, typical process minimum 70xc v dd /v ddq = 2.3v, slow-slow process maximum 0xc v dd /v ddq = 2.7v, fast-fast process minimum typical low typical high maximum 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 iout(ma) vout(v) pull-down characteristics for full strength output driver maximum typical high minumum vout(v) iout(ma) -220 -200 -180 -160 -140 -120 -100 -80 -60 -40 -20 0 0.0 1.0 2.0 typical low pull-up characteristics for full strength output driver - 22 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n [ table 8 ] full strength driver characteristics pull-down current (ma) pull-up current (ma) voltage (v) typical low typical high minimum maximum typical low typical high minimum maximum 0.1 6.0 6.8 4.6 9.6 -6.1 -7.6 -4.6 -10.0 0.2 12.2 13.5 9.2 18.2 -12.2 -14.5 -9.2 -20.0 0.3 18.1 20.1 13.8 26.0 -18.1 -21.2 -13.8 -29.8 0.4 24.1 26.6 18.4 33.9 -24.0 -27.7 -18.4 -38.8 0.5 29.8 33.0 23.0 41.8 -29.8 -34.1 -23.0 -46.8 0.6 34.6 39.1 27.7 49.4 -34.3 -40.5 -27.7 -54.4 0.7 39.4 44.2 32.2 56.8 -38.1 -46.9 -32.2 -61.8 0.8 43.7 49.8 36.8 63.2 -41.1 -53.1 -36.0 -69.5 0.9 47.5 55.2 39.6 69.9 -41.8 -59.4 -38.2 -77.3 1.0 51.3 60.3 42.6 76.3 -46.0 -65.5 -38.7 -85.2 1.1 54.1 65.2 44.8 82.5 -47.8 -71.6 -39.0 -93.0 1.2 56.2 69.9 46.2 88.3 -49.2 -77.6 -39.2 -100.6 1.3 57.9 74.2 47.1 93.8 -50.0 -83.6 -39.4 -108.1 1.4 59.3 78.4 47.4 99.1 -50.5 -89.7 -39.6 -115.5 1.5 60.1 82.3 47.7 103.8 -50.7 -95.5 -39.9 -123.0 1.6 60.5 85.9 48.0 108.4 -51.0 -101.3 -40.1 -130.4 1.7 61.0 89.1 48.4 112.1 -51.1 -107.1 -40.2 -136.7 1.8 61.5 92.2 48.9 115.9 -51.3 -112.4 -40.3 -144.2 1.9 62.0 95.3 49.1 119.6 -51.5 -118.7 -40.4 -150.5 2.0 62.5 97.2 49.4 123.3 -51.6 -124.0 -40.5 -156.9 2.1 62.9 99.1 49.6 126.5 -51.8 -129.3 -40.6 -163.2 2.2 63.3 100.9 49.8 129.5 -52.0 -134.6 -40.7 -169.6 2.3 63.8 101.9 49.9 132.4 -52.2 -139.9 -40.8 -176.0 2.4 64.1 102.8 50.0 135.0 -52.3 -145.2 -40.9 -181.3 2.5 64.6 103.8 50.2 137.3 -52.5 -150.5 -41.0 -187.6 2.6 64.8 104.6 50.4 139.2 -52.7 -155.3 -41.1 -192.9 2.7 65.0 105.4 50.5 140.8 -52.8 -160.1 -41.2 -198.2 figure 9. i/v characteristics for input/output buffers : pull-down(above) and pull-up(below) - 23 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n iout(ma) minimum typical low typical high maximum 0 10 20 30 40 50 60 70 80 90 0.0 1.0 2.0 iout(ma) vout(v) pull-down characteristics for weak output driver maximum typical high minumum vout(v) iout(ma) -90 -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 typical low pull-up characteristics for weak output driver - 24 - k4h561638n datasheet ddr sdram rev. 1.01 K4H560838N k4h560438n [ table 9 ] weak driver characteristics pull-down current (ma) pull-up current (ma) voltage (v) typical low typical high minimum maximum typical low typical high minimum maximum 0.1 3.4 3.8 2.6 5.0 -3.5 -4.3 -2.6 -5.0 0.2 6.9 7.6 5.2 9.9 -6.9 -8.2 -5.2 -9.9 0.3 10.3 11.4 7.8 14.6 -10.3 -12.0 -7.8 -14.6 0.4 13.6 15.1 10.4 19.2 -13.6 -15.7 -10.4 -19.2 0.5 16.9 18.7 13.0 23.6 -16.9 -19.3 -13.0 -23.6 0.6 19.6 22.1 15.7 28.0 -19.4 -22.9 -15.7 -28.0 0.7 22.3 25.0 18.2 32.2 -21.5 -26.5 -18.2 -32.2 0.8 24.7 28.2 20.8 35.8 -23.3 -30.1 -20.4 -35.8 0.9 26.9 31.3 22.4 39.5 -24.8 -33.6 -21.6 -39.5 1.0 29.0 34.1 24.1 43.2 -26.0 -37.1 -21.9 -43.2 1.1 30.6 36.9 25.4 46.7 -27.1 -40.3 -22.1 -46.7 1.2 31.8 39.5 26.2 50.0 -27.8 -43.1 -22.2 -50.0 1.3 32.8 42.0 26.6 53.1 -28.3 -45.8 -22.3 -53.1 1.4 33.5 44.4 26.8 56.1 -28.6 -48.4 -22.4 -56.1 1.5 34.0 46.6 27.0 58.7 -28.7 -50.7 -22.6 -58.7 1.6 34.3 48.6 27.2 61.4 -28.9 -52.9 -22.7 -61.4 1.7 34.5 50.5 27.4 63.5 -28.9 -55.0 -22.7 -63.5 1.8 34.8 52.2 27.7 65.6 -29.0 -56.8 -22.8 -65.6 1.9 35.1 53.9 27.8 67.7 -29.2 -58.7 -22.9 -67.7 2.0 35.4 55.0 28.0 69.8 -29.2 -60.0 -22.9 -69.8 2.1 35.6 56.1 28.1 71.6 -29.3 -61.2 -23.0 -71.6 2.2 35.8 57.1 28.2 73.3 -29.5 -62.4 -23.0 -73.3 2.3 36.1 57.7 28.3 74.9 -29.5 -63.1 -23.1 -74.9 2.4 36.3 58.2 28.3 76.4 -29.6 -63.8 -23.2 -76.4 2.5 36.5 58.7 28.4 77.7 -29.7 -64.4 -23.2 -77.7 2.6 36.7 59.2 28.5 78.8 -29.8 -65.1 -23.3 -78.8 2.7 36.8 59.6 28.6 79.7 -29.9 -65.8 -23.3 -79.7 |
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